SSQ6N60 2.6a, 600v, r ds(on) 1500m n-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen free features ? low r ds(on) technology. ? low thermal impedance. ? fast switching speed. applications ? electronic ballast. ? electronic transformer ? switch mode power supply. absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 600 v gate-source voltage v gs 20 v continuous drain current 1 i d @t c =25 2.6 a pulsed drain current 2 i dm 16 a continuous source current (diode conduction) 1 i s 2.6 a total power dissipation 1 p d @t c =25 36 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 62.5 c / w maximum thermal resist ance junction-case r jc 3.47 c / w notes 1 package limited. 2 pulse width limited by maximum junction temperature. ? ? gate ? ? source ? ? drain ref. millimete r ref. millimete r min. max. min. max. a 7.90 8.10 n 0.75 0.95 b 9.45 9.65 o 0.66 0.86 c 9.87 10.47 p 13.50 14.50 d - 11.50 q 2.44 3.44 e 1.06 1.46 r 3.50 3.70 f 2.60 3.00 s 1.15 1.45 g 6.30 6.70 t 4.30 4.70 h 8.35 8.75 u - 2.7 j1.60 t yp . v 1.89 3.09 k 1.10 1.30 w 0.40 0.60 l 1.17 1.37 x 2.60 3.60 m - 1.50 to-220p dimensions in millimeters i f m q q u v b r t s p x k 2 3 1 c a d e g h j l n o w
SSQ6N60 2.6a, 600v, r ds(on) 1500m n-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 2 - 4 v v ds = v gs, i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 25 a v ds = 600v, v gs = 0v - - 250 v ds = 480v, v gs = 0v, t j =125c on-state drain current 1 i d(on) 5 - - a v ds = 10v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 1500 m ? v gs = 10v, i d = 2.2 a forward transconductance 1 g fs - 2.5 - s v ds = 40v, i d = 2.2 a diode forward voltage v sd - 1.4 - v i s = 2.6 a, v gs = 0 v dynamic 2 total gate charge q g - 16 - nc v ds = 480 v v gs = 10 v i d = 2.2 a gate-source charge q gs - 3.4 - gate-drain charge q gd - 8 - turn-on delay time t d(on) - 12.6 - ns v dd = 300 v i d = 2.2 a v gen = 10 v r l = 136 ?? r gen = 12 ? rise time t r - 6.8 - turn-off delay time t d(off) - 26.4 - fall time t f - 8.8 - input capacitance c iss - 557 - pf v ds = 25 v v gs = 0 v f = 1mhz output capacitance c oss - 84 - reverse transfer capacitance c rss - 20 - notes 1 pulse test pulse width Q 300 s, duty cycle Q 2 . 2 guaranteed by design, not s ubject to production testing.
SSQ6N60 2.6a, 600v, r ds(on) 1500m n-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SSQ6N60 2.6a, 600v, r ds(on) 1500m n-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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